IEEE - Institute of Electrical and Electronics Engineers, Inc. - Wide Band Gap Gallium Phosphide Solar Cells

Author(s): Xuesong Lu ; S. Huang ; M. B. Diaz ; N. Kotulak ; R. Hao ; R. Opila ; A. Barnett
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2012
Volume: 2
Page(s): 214 - 220
ISSN (Electronic): 2156-3403
ISSN (Paper): 2156-3381
DOI: 10.1109/JPHOTOV.2011.2182180
Regular:

Gallium phosphide (GaP), with its wide band gap of 2.26 eV, is a good candidate for the top junction solar cell in a multijunction solar cell system. Here, we design, fabricate, characterize, and... View More

Advertisement