IEEE - Institute of Electrical and Electronics Engineers, Inc. - Band-to-Band Tunneling Injection Insulated-Gate Bipolar Transistor with a Soft Reverse-Recovery Built-In Diode

Author(s): Huaping Jiang ; Jin Wei ; Bo Zhang ; Wanjun Chen ; Ming Qiao ; Zhaoji Li
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2012
Volume: 33
Page Count: 3
Page(s): 1,684 - 1,686
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2012.2219612
Regular:

A band-to-band tunneling injection insulated-gate bipolar transistor (IGBT) featuring a tunnel junction as the collector p-n junction is proposed. The tunnel junction injects not only holes into... View More

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