IEEE - Institute of Electrical and Electronics Engineers, Inc. - Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications

Author(s): Tsung-Ming Tsai ; Kuan-Chang Chang ; Ting-Chang Chang ; Yong-En Syu ; Siang-Lan Chuang ; Geng-Wei Chang ; Guan-Ru Liu ; Min-Chen Chen ; Hui-Chun Huang ; Shih-Kun Liu ; Ya-Hsiang Tai ; Der-Shin Gan ; Ya-Liang Yang ; Tai-Fa Young ; Bae-Heng Tseng ; Kai-Huang Chen ; Ming-Jinn Tsai ; Cong Ye ; Hao Wang ; S. M. Sze
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2012
Volume: 33
Page Count: 3
Page(s): 1,696 - 1,698
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2012.2217933
Regular:

In this letter, we successfully produced resistive switching behaviors by nickel doped into silicon oxide at room temperature. The nickel element was doped into silicon oxide, which is a useful... View More

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