IEEE - Institute of Electrical and Electronics Engineers, Inc. - Double-Channel AlGaN/GaN High Electron Mobility Transistor With Back Barriers

Author(s): A. Kamath ; T. Patil ; R. Adari ; I. Bhattacharya ; S. Ganguly ; R. W. Aldhaheri ; M. A. Hussain ; D. Saha
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2012
Volume: 33
Page Count: 3
Page(s): 1,690 - 1,692
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2012.2218272
Regular:

We have developed a double-channel high electron mobility transistor with back barriers for carrier confinement. We have observed that the double-channel devices may suffer from the lack of gate... View More

Advertisement