IEEE - Institute of Electrical and Electronics Engineers, Inc. - Dynamic Transconductance Dispersion Characterization of Channel Hot-Carrier Stressed 0.25- $\mu\hbox{m}$ AlGaN/GaN HEMTs

Author(s): M. Silvestri ; M. J. Uren ; M. Kuball
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 2012
Volume: 33
Page Count: 3
Page(s): 1,550 - 1,552
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2012.2214200
Regular:

Using the dynamic transconductance frequency dispersion technique, we characterize unstressed and hot-electron stressed short-channel AlGaN/GaN high-electron-mobility transistors. The... View More

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