IEEE - Institute of Electrical and Electronics Engineers, Inc. - $\hbox{1}/f$ Noise in 45-nm RESET-State Phase-Change Memory Devices: Characterization, Impact on Memory Readout Operation, and Scaling Perspectives

Author(s): Giovanni Betti Beneventi ; M. Ferro ; P. Fantini
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 2012
Volume: 33
Page Count: 3
Page(s): 1,559 - 1,561
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2012.2214472
Regular:

In this letter, we study the low-frequency noise behavior of RESET-state Phase-Change Memory (PCM) devices belonging to a 45-nm technology node. Furthermore, by dealing with a typical case study,... View More

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