IEEE - Institute of Electrical and Electronics Engineers, Inc. - NLDMOS ESD Scaling Under Human Metal Model for 40-V Mixed-Signal Applications

Author(s): S. Malobabic ; J. A. Salcedo ; Jean-Jacques Hajjar ; J. J. Liou
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 2012
Volume: 33
Page Count: 3
Page(s): 1,595 - 1,597
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2012.2213574
Regular:

Electrostatic discharge (ESD) robustness of LDMOS (laterally diffused MOS) devices is found to be highly dependent on the type of ESD stress. In particular, the device's ESD robustness does not... View More

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