IEEE - Institute of Electrical and Electronics Engineers, Inc. - Understanding the Superlinear Onset of Tunnel-FET Output Characteristic

Author(s): L. De Michielis ; L. Lattanzio ; A. M. Ionescu
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 2012
Volume: 33
Page Count: 3
Page(s): 1,523 - 1,525
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2012.2212175
Regular:

In this letter, we report that the source and channel Fermi-Dirac distributions in interband-tunneling-controlled transistors play a fundamental role on the modulation of the injected... View More

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