IEEE - Institute of Electrical and Electronics Engineers, Inc. - Investigation of One-Dimensional Thickness Scaling on $ \hbox{Cu/HfO}_{x}/\hbox{Pt}$ Resistive Switching Device Performance

Author(s): Ming Wang ; Hangbing Lv ; Qi Liu ; Yingtao Li ; Zhongguang Xu ; Shibing Long ; Hongwei Xie ; Kangwei Zhang ; Xiaoyu Liu ; Haitao Sun ; Xiaoyi Yang ; Ming Liu
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 2012
Volume: 33
Page Count: 3
Page(s): 1,556 - 1,558
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2012.2211563
Regular:

Scaling is a key issue for resistive switching (RS) memory before commercialization. In this letter, we reveal the impact of electrode diffusion on the device performance as the thickness of RS... View More

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