IEEE - Institute of Electrical and Electronics Engineers, Inc. - Hydrogen-Terminated Diamond Field-Effect Transistors With Cutoff Frequency of 53 GHz

Author(s): S. A. O. Russell ; S. Sharabi ; A. Tallaire ; D. A. J. Moran
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2012
Volume: 33
Page Count: 3
Page(s): 1,471 - 1,473
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2012.2210020
Regular:

Homoepitaxial diamond has been used to demonstrate the RF performance of 50-nm gate length hydrogen-terminated diamond field-effect transistors. An extrinsic cutoff frequency of 53 GHz is achieved... View More

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