IEEE - Institute of Electrical and Electronics Engineers, Inc. - Characterization of Channel-Diameter-Dependent Low-Frequency Noise in Silicon Nanowire Field-Effect Transistors

Author(s): Sang-Hyun Lee ; Chang-Ki Baek ; Sooyoung Park ; Dong-Won Kim ; Dong Kyun Sohn ; Jeong-Soo Lee ; D. M. Kim ; Yoon-Ha Jeong
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2012
Volume: 33
Page Count: 3
Page(s): 1,348 - 1,350
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2012.2209625
Regular:

The low-frequency noise in the silicon nanowire field-effect transistor (SNWFET) is characterized using SNWFETs with different channel diameters dNW. The current density and the... View More

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