IEEE - Institute of Electrical and Electronics Engineers, Inc. - High-Holding-Voltage Silicon-Controlled Rectifier for ESD Applications

Author(s): Shurong Dong ; Jian Wu ; Meng Miao ; Jie Zeng ; Yan Han ; J. J. Liou
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2012
Volume: 33
Page Count: 3
Page(s): 1,345 - 1,347
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2012.2208934
Regular:

Low-voltage-triggering silicon-controlled rectifier (LVTSCR) having a gate structure can offer a low trigger voltage in electrostatic discharge (ESD) applications. To avoid the threat of... View More

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