IEEE - Institute of Electrical and Electronics Engineers, Inc. - High-Performance Germanium $\Omega$ -Gate MuGFET With Schottky-Barrier Nickel Germanide Source/Drain and Low-Temperature Disilane-Passivated Gate Stack

Author(s): Bin Liu ; Xiao Gong ; Genquan Han ; P. S. Y. Lim ; Yi Tong ; Qian Zhou ; Yue Yang ; N. Daval ; C. Veytizou ; D. Delprat ; Bich-Yen Nguyen ; Yee-Chia Yeo
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2012
Volume: 33
Page Count: 3
Page(s): 1,336 - 1,338
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2012.2207368
Regular:

We report high-performance p-channel Ω-gate germanium (Ge) p-channel multigate field-effect transistor (MuGFET) with low-temperature Si2H6 surface passivation and... View More

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