IEEE - Institute of Electrical and Electronics Engineers, Inc. - Enhanced Programming and Erasing Speeds in P-Channel Charge-Trapping Flash Memory Device With SiGe Buried Channel

Author(s): Li-Jung Liu ; Kuei-Shu Chang-Liao ; Yi-Chuen Jian ; Jen-Wei Cheng ; Tien-Ko Wang ; Ming-Jinn Tsai
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2012
Volume: 33
Page Count: 3
Page(s): 1,264 - 1,266
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2012.2206069
Regular:

The operation characteristics of p-channel TaN/ Al2O3/HfO2/HfAlO2/SiO2/Si MAHOS-type nonvolatile memory devices with different Ge contents in... View More

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