IEEE - Institute of Electrical and Electronics Engineers, Inc. - Design and Scalability of a Memory Array Utilizing Anchor-Free Nanoelectromechanical Nonvolatile Memory Device

Author(s): R. Vaddi ; V. Pott ; Geng Li Chua ; J. T. M. Lin ; T. T. Kim
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2012
Volume: 33
Page Count: 3
Page(s): 1,315 - 1,317
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2012.2206364
Regular:

This letter explains a nanoelectromechanical (NEM) nonvolatile memory (NVM) architecture employing an anchor-free electrode (shuttle) structure. The proposed NEM device utilizes adhesion... View More

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