IEEE - Institute of Electrical and Electronics Engineers, Inc. - Light-Induced Hysteresis of In–Ga–Zn–O Thin-Film Transistors With Various Temperatures

Author(s): Seung-Hee Kuk ; Soo-Yeon Lee ; Sun-Jae Kim ; Binn Kim ; Soo-Jeong Park ; Jang-Yeon Kwon ; Min-Koo Han
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2012
Volume: 33
Page Count: 3
Page(s): 1,279 - 1,281
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2012.2205891
Regular:

We investigated the hysteresis phenomenon in In-Ga-Zn-O thin-film transistors under light illumination. Hysteresis was observed under the 450-nm illumination and was increased with temperature.... View More

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