IEEE - Institute of Electrical and Electronics Engineers, Inc. - 200-V Lateral Superjunction LIGBT on Partial SOI

Author(s): E. C. T. Kho ; A. D. Hoelke ; S. J. Pilkington ; D. K. Pal ; Wan Azlan Wan Zainal Abidin ; Liang Yew Ng ; M. Antoniou ; F. Udrea
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2012
Volume: 33
Page Count: 3
Page(s): 1,291 - 1,293
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2012.2205892
Regular:

This letter presents a novel lateral superjunction lateral insulated-gate bipolar transistor (LIGBT) in partial silicon-on-insulator (SOI) technology in 0.18-μm partial-SOI (PSOI)... View More

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