IEEE - Institute of Electrical and Electronics Engineers, Inc. - Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Devices

Author(s): Chunhua Zhou ; Qimeng Jiang ; Sen Huang ; K. J. Chen
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 2012
Volume: 33
Page Count: 3
Page(s): 1,132 - 1,134
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2012.2200874
Regular:

Vertical leakage/breakdown mechanisms in AlGaN/GaN high-electron-mobility transistors grown on low-resistivity p-type (111) Si substrate are studied by temperature-dependent... View More

Advertisement