IEEE - Institute of Electrical and Electronics Engineers, Inc. - Thermally Stable Operation of H-Terminated Diamond FETs by $\hbox{NO}_{2}$ Adsorption and $\hbox{Al}_{2}\hbox{O}_{3}$ Passivation

Author(s): K. Hirama ; H. Sato ; Y. Harada ; H. Yamamoto ; M. Kasu
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 2012
Volume: 33
Page Count: 3
Page(s): 1,111 - 1,113
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2012.2200230
Regular:

Using the NO2 adsorption and Al2O3 passivation technique, we improved the thermal stability of hydrogen-terminated diamond field-effect transistors (FETs) and then... View More

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