IEEE - Institute of Electrical and Electronics Engineers, Inc. - AlGaN/GaN HEMTs on Silicon With Hybrid Schottky–Ohmic Drain for High Breakdown Voltage and Low Leakage Current

Author(s): Yi-Wei Lian ; Yu-Syuan Lin ; Hou-Cheng Lu ; Yen-Chieh Huang ; S. S. H. Hsu
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 July 2012
Volume: 33
Page Count: 3
Page(s): 973 - 975
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2012.2197171
Regular:

In this letter, a hybrid Schottky-ohmic drain structure is proposed for AlGaN/GaN high-electron-mobility transistors on a Si substrate. Without additional photomasks and extra process... View More

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