IEEE - Institute of Electrical and Electronics Engineers, Inc. - A Simple Gate-Dielectric Fabrication Process for AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors

Author(s): Han-Yin Liu ; Bo-Yi Chou ; Wei-Chou Hsu ; Ching-Sung Lee ; Chiu-Sheng Ho
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 July 2012
Volume: 33
Page Count: 3
Page(s): 997 - 999
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2012.2197370
Regular:

This letter reports a simple processing method for fabricating metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) by using hydrogen peroxide... View More

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