IEEE - Institute of Electrical and Electronics Engineers, Inc. - $\hbox{HfO}_{2}$ -Based RRAM Devices With Varying Contact Sizes and Their Electrical Behavior

Author(s): Venkatakrishnan Sriraman ; Xiang Li ; Navab Singh ; Sungjoo Lee
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 July 2012
Volume: 33
Page Count: 3
Page(s): 1,060 - 1,062
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2012.2195709
Regular:

In this letter, HfO2-based RRAM with varying device sizes is discussed with an analysis of the device-size dependence on reset current (Ireset). Device sizes down to... View More

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