IEEE - Institute of Electrical and Electronics Engineers, Inc. - Effect of Temperature and Humidity on $\hbox{NO}_{2}$ and $\hbox{NH}_{3}$ Gas Sensitivity of Bottom-Gate Graphene FETs Prepared by ICP-CVD

Author(s): Chang-Hee Kim ; Sung-Won Yoo ; Dong-Woo Nam ; Sunae Seo ; Jong-Ho Lee
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 July 2012
Volume: 33
Page Count: 3
Page(s): 1,084 - 1,086
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2012.2193867
Regular:

Graphene was used for a sensing part of bottom-gate field-effect transistor (FET)-type gas sensors, and the sensing performance of the sensors was studied. We investigated the effect of... View More

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