IEEE - Institute of Electrical and Electronics Engineers, Inc. - Device Characteristics of InGaSb/AlSb High-Hole-Mobility FETs

Author(s): Han-Chieh Ho ; Zon-Yan Gao ; Heng-Kuang Lin ; Pei-Chin Chiu ; Yue-Ming Hsin ; Jen-Inn Chyi
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 July 2012
Volume: 33
Page Count: 3
Page(s): 964 - 966
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2012.2193656
Regular:

This letter reports the effect of growth temperature on carrier transport characteristics in In0.4Ga0.6Sb/AlSb heterostructure and demonstrates that hole mobility was... View More

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