IEEE - Institute of Electrical and Electronics Engineers, Inc. - Performance of 5-nm a-IGZO TFTs With Various Channel Lengths and an Etch Stopper Manufactured by Back UV Exposure

Author(s): M. Mativenga ; Di Geng ; J. H. Chang ; T. J. Tredwell ; Jin Jang
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2012
Volume: 33
Page Count: 3
Page(s): 824 - 826
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2012.2191132
Regular:

Stable and fast-switching thin-film transistors and circuits incorporating 5-nm-thick amorphous-InGaZnO (a-IGZO) active layers are demonstrated, and their dependence on channel length is studied.... View More

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