IEEE - Institute of Electrical and Electronics Engineers, Inc. - Self-Aligned N-Polar GaN/InAlN MIS-HEMTs With Record Extrinsic Transconductance of 1105 mS/mm

Author(s): Nidhi ; S. Dasgupta ; Jing Lu ; J. S. Speck ; U. K. Mishra
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2012
Volume: 33
Page Count: 3
Page(s): 794 - 796
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2012.2190965
Regular:

In this letter, we demonstrate state-of-the-art performance from N-polar GaN/InAlN metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs). Self-aligned gate-first... View More

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