IEEE - Institute of Electrical and Electronics Engineers, Inc. - Design of High-Aspect-Ratio T-Gates on N-Polar GaN/AlGaN MIS-HEMTs for High $f_{\max}$

Author(s): D. J. Denninghoff ; S. Dasgupta ; Jing Lu ; S. Keller ; U. K. Mishra
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2012
Volume: 33
Page Count: 3
Page(s): 785 - 787
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2012.2191134
Regular:

This letter discusses the design of high-aspect-ratio T-gates on molecular beam epitaxy (MBE)-grown nitrogen-polar (N-polar) GaN/AlGaN metal-insulator-semiconductor high-electron-mobiliView More

Advertisement