IEEE - Institute of Electrical and Electronics Engineers, Inc. - A Comparison of Short-Channel Control in Planar Bulk and Fully Depleted Devices

Author(s): R. Muralidhar ; Jin Cai ; I. Lauer ; K. Chan ; P. Kulkarni ; Young-Hee Kim ; Zhibin Ren ; Dae-Gyu Park ; P. Oldiges ; G. Shahidi
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2012
Volume: 33
Page Count: 3
Page(s): 776 - 778
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2012.2192411
Regular:

The short-channel effects (SCEs) of planar bulk and fully depleted finFET devices have been compared using the same junction overlap and lateral gradient, and it is shown that, for finFET devices,... View More

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