IEEE - Institute of Electrical and Electronics Engineers, Inc. - Low-Temperature Fabrication and Characteristics of Lanthanum Indium Zinc Oxide Thin-Film Transistors

Author(s): Jae Chul Park ; Sang Wook Kim ; Chang Jung Kim ; Ho-Nyeon Lee
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2012
Volume: 33
Page Count: 3
Page(s): 685 - 687
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2012.2188849
Regular:

We fabricated lanthanum indium zinc oxide (IZO) (La-IZO) thin-film transistors (TFTs) using radio frequency cosputtering of IZO and lanthanum. The field-effect mobility and switching ratio of the... View More

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