IEEE - Institute of Electrical and Electronics Engineers, Inc. - MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 $\Omega\cdot\hbox{mm}$

Author(s): Jia Guo ; Guowang Li ; F. Faria ; Yu Cao ; Ronghua Wang ; J. Verma ; Xiang Gao ; Shiping Guo ; E. Beam ; A. Ketterson ; M. Schuette ; P. Saunier ; M. Wistey ; D. Jena ; Huili Xing
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2012
Volume: 33
Page Count: 3
Page(s): 525 - 527
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2012.2186116
Regular:

Nonalloyed ohmic contacts regrown by molecular beam epitaxy were made on InAlN/AlN/GaN/SiC high-electron-mobility transistors (HEMTs). Transmission-line-method measurements were... View More

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