IEEE - Institute of Electrical and Electronics Engineers, Inc. - Selective-Area High-Quality Germanium Growth for Monolithic Integrated Optoelectronics

Author(s): Hyun-Yong Yu ; Jin-Hong Park ; A. K. Okyay ; K. C. Saraswat
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2012
Volume: 33
Page Count: 3
Page(s): 579 - 581
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2011.2181814
Regular:

Selective-area germanium (Ge) layer on silicon (Si) is desired to realize the advanced Ge devices integrated with Si very-large-scale-integration (VLSI) components. We demonstrate the... View More

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