IEEE - Institute of Electrical and Electronics Engineers, Inc. - Hydrogen-Induced Resistive Switching in TiN/ALD $ \hbox{HfO}_{2}$ /PEALD TiN RRAM Device

Author(s): Yang Yin Chen ; L. Goux ; J. Swerts ; M. Toeller ; C. Adelmann ; J. Kittl ; M. Jurczak ; G. Groeseneken ; D. J. Wouters
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2012
Volume: 33
Page Count: 3
Page(s): 483 - 485
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2012.2185212
Regular:

We developed TiN\HfO2\TiN RRAM devices by using hydrogen-based plasma enhanced atomic layer deposition (PEALD) for the top-electrode TiN processing, demonstrating attractive bipolar... View More

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