IEEE - Institute of Electrical and Electronics Engineers, Inc. - Defect Loss: A New Concept for Reliability of MOSFETs

Author(s): M. Duan ; J. F. Zhang ; Z. Ji ; W. Zhang ; B. Kaczer ; S. De Gendt ; G. Groeseneken
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2012
Volume: 33
Page Count: 3
Page(s): 480 - 482
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2012.2185033
Regular:

Defect generation limits device lifetime and enhances its variability. Previous works mainly addressed the generation kinetics and process. The current understanding is that the microstructure... View More

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