IEEE - Institute of Electrical and Electronics Engineers, Inc. - In Situ Co/SiC(N,H) Capping Layers for Cu/Low- k Interconnects

Author(s): C.-C Yang ; B. Li ; H. Shobha ; S. Nguyen ; A. Grill ; W. Ye ; J. AuBuchon ; M. Shek ; D. Edelstein
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2012
Volume: 33
Page Count: 3
Page(s): 588 - 590
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2012.2183850
Regular:

Co films with various thicknesses were selectively deposited as Cu capping layers by chemical vapor deposition. Both in situ and ex situ Co/SiC(N,H) capping processes were evaluated and have shown... View More

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