IEEE - Institute of Electrical and Electronics Engineers, Inc. - Random Telegraph Noise in 1X-nm CMOS Silicide Contacts and a Method to Extract Trap Density

Author(s): Min-Cheng Chen ; Chia-Yi Lin ; Bo-Yuan Chen ; Chang-Hsien Lin ; Guo-Wei Huang ; Chia-Hua Ho ; Tahui Wang ; Chenming Hu ; Fu-Liang Yang
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2012
Volume: 33
Page Count: 3
Page(s): 591 - 593
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2011.2182029
Regular:

The behavior of random telegraph noise was affected by nickel silicide barrier height engineering in advanced nano-CMOS technologies. Contact resistance fluctuations with magnitude of up to 40%... View More

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