IEEE - Institute of Electrical and Electronics Engineers, Inc. - Flexible Write-Once–Read-Many-Times Memory Device Based on a Nickel Oxide Thin Film

Author(s): Q. Yu ; Y. Liu ; T. P. Chen ; Z. Liu ; Y. F. Yu ; H. W. Lei ; J. Zhu ; S. Fung
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 March 2012
Volume: 59
Page Count: 5
Page(s): 858 - 862
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2011.2179939
Regular:

A write-once-read-many-times (WORM) memory device based on conduction switching of a NiO thin film in a metal-insulator-metal structure is fabricated on a flexible substrate. The... View More

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