IEEE - Institute of Electrical and Electronics Engineers, Inc. - The Improvement of High- $k$ /Metal Gate pMOSFET Performance and Reliability Using Optimized Si Cap/SiGe Channel Structure

Author(s): Wen-Kuan Yeh ; Yu-Ting Chen ; Fon-Shan Huang ; Chia-Wei Hsu ; Chun-Yu Chen ; Yean-Kuen Fang ; Kwang-Jow Gan ; Po-Ying Chen
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 March 2011
Volume: 11
Page Count: 6
Page(s): 7 - 12
ISSN (Paper): 1530-4388
ISSN (Online): 1558-2574
DOI: 10.1109/TDMR.2010.2065806
Regular:

The impact of the Si cap/SiGe layer on the Hf-based high-k /metal gate SiGe channel pMOSFET performance and reliability has been investigated. We proposed an optimized strain SiGe channel... View More

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