IEEE - Institute of Electrical and Electronics Engineers, Inc. - Composition Effects of $\hbox{Ti}_{x}\hbox{Ta}_{y}$ Dual-Doped $\hbox{HfO}_{x}/\hbox{SiO}_{2}$ Stacked Dielectrics on Electrical and Reliability Characteristics of Advanced Metal-Oxide-Semiconductor Capacitors

Author(s): Chin-Lung Cheng ; Jeng-Haur Horng ; Jin-Tsong Jeng ; Min-Sheng Chiu
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 March 2010
Volume: 10
Page Count: 7
Page(s): 116 - 122
ISSN (Paper): 1530-4388
ISSN (Online): 1558-2574
DOI: 10.1109/TDMR.2009.2035689
Regular:

Metal-oxide-semiconductor (MOS) capacitors with metal-gate/high-k dielectric stacked films are a promising candidate to provide enhanced device performance. To study these issues, a... View More

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