IEEE - Institute of Electrical and Electronics Engineers, Inc. - An Investigation of the Effect of Elastic Constants of Spacer in n-FETs CESL Stressor

Author(s): Chien-Chao Huang ; Hao-Yu Chen ; Hung-Keng Chen ; Sanboh Lee
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 July 2010
Volume: 31
Page Count: 3
Page(s): 638 - 640
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2010.2048191
Regular:

The strained-Si approach from the contact etching stop layer (CESL) stressor with two kinds of Young's modulus spacer has been investigated. From the TSUPREM4 simulation of the CESL tensile... View More

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