IEEE - Institute of Electrical and Electronics Engineers, Inc. - Analysis and Evaluation of a BJT-Based 1T-DRAM

Author(s): Sung-Jin Choi ; Jin-Woo Han ; Dong-Il Moon ; Yang-Kyu Choi
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2010
Volume: 31
Page Count: 3
Page(s): 393 - 395
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/LED.2010.2042675
Regular:

A BJT-based 1T-DRAM that utilizes a latch process is analyzed in an experimental assessment. The experimental study reveals that undesired activation of a parasitic BJT by a high leakage current... View More

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