IEEE - Institute of Electrical and Electronics Engineers, Inc. - Low-K/Cu CMOS-based SoC technology with 115-GHz f/sub T/, 100-GHz f/sub max/, low noise 80-nm RF CMOS, high-Q MiM capacitor, and spiral Cu inductor

Author(s): Jyh-Chyurn Guo
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 2006
Volume: 19
Page(s): 331 - 338
ISSN (Paper): 0894-6507
ISSN (Online): 1558-2345
DOI: 10.1109/TSM.2006.879415
Regular:

Logic CMOS-based RF technology is introduced for a 10-Gb transceiver in which active and passive RF devices have been realized in a single chip. RF nMOS of 115-GHz fT, 100-GHz... View More

Advertisement