IEEE - Institute of Electrical and Electronics Engineers, Inc. - Two layer stepped-QW channel HFETs on InP-substrate

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

Author(s): Strahle, S. ; Henle, B. ; Mittermeier, E. ; Erben, U. ; Rees, P.K. ; Kohn, E.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1993
Conference Location: Ithaca, NY, USA
Conference Date: 2 August 1993
Page(s): 494 - 503
ISBN (Paper): 0-7803-0894-8
DOI: 10.1109/CORNEL.1993.303123
Regular:

A novel HFET structure on InP containing an asymmetric two layer stepped QW channel sandwiched between two InAlAs barriers is proposed. A small bandgap InGaAs channel hosts the 2DEG-density and... View More

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