IEEE - Institute of Electrical and Electronics Engineers, Inc. - High microwave power performance of self-aligned InGaP/GaAs heterojunction bipolar transistors

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

Author(s): Yang, L.W. ; Fu, S.T. ; Clark, B.F. ; Brozovich, R.S. ; Lin, H.H. ; Liu, S.M.J. ; Chao, P.C. ; Ren, F. ; Abernathy, C.R. ; Pearton, S.J. ; Lothian, J.R. ; Wisk, P.W. ; Fullowan, T.R. ; Chiu, T.Y. ; Pei, S.S.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1993
Conference Location: Ithaca, NY, USA
Conference Date: 2 August 1993
Page(s): 43 - 51
ISBN (Paper): 0-7803-0894-8
DOI: 10.1109/CORNEL.1993.303067
Regular:

The results of experimental study and design criteria of high efficiency power heterojunction bipolar transistors (HBTs) are reported and discussed. Self-aligned npn HBTs fabricated by dry process... View More

Advertisement