IEEE - Institute of Electrical and Electronics Engineers, Inc. - Channel-width measurements of LOCOS- and trench-isolated n-MOSFETs by photoemission

Proceedings of IEEE International Conference on Microelectronic Test Structures

Author(s): Ohzone, T. ; Iwata, H.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1993
Conference Location: Sitges, Spain, Spain
Conference Date: 22 March 1993
Page(s): 269 - 274
ISBN (Paper): 0-7803-0857-3
DOI: 10.1109/ICMTS.1993.292908
Regular:

A simple, accurate, and nondestructive method for measuring the channel width of a processed n-MOSFET by using a high-resolution photoemission microscope is proposed. It is confirmed for test... View More

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