IEEE - Institute of Electrical and Electronics Engineers, Inc. - Evaluating the graft base lateral diffusion depth of high-performance bipolar transistors by using test structures

Proceedings of IEEE International Conference on Microelectronic Test Structures

Author(s): Tamaki, Y. ; Shiba, T. ; Kure, T. ; Nakamura, T.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1993
Conference Location: Sitges, Spain, Spain
Conference Date: 22 March 1993
Page(s): 51 - 54
ISBN (Paper): 0-7803-0857-3
DOI: 10.1109/ICMTS.1993.292894
Regular:

A test structure is proposed for evaluating the graft base lateral diffusion depth of high-performance double-polysilicon bipolar transistors in order to achieve high cutoff frequencies. The test... View More

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