IEEE - Institute of Electrical and Electronics Engineers, Inc. - Projecting oxide lifetime by a step voltage method using electric field correction (MOS VLSI)

Proceedings of IEEE International Conference on Microelectronic Test Structures

Author(s): Shigenobu, T. ; Uchida, H. ; Hirashita, N.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1993
Conference Location: Sitges, Spain, Spain
Conference Date: 22 March 1993
Page(s): 125 - 130
ISBN (Paper): 0-7803-0857-3
DOI: 10.1109/ICMTS.1993.292882
Regular:

The validity of a projection method of time dependent dielectric breakdown (TDDB) lifetime from step voltage tests is investigated. The conventional projection method is found to be unable to... View More

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