IEEE - Institute of Electrical and Electronics Engineers, Inc. - Elimination of sidegating in n-channel GaAs MESFETs using a p-type well

1992 GaAs IC Symposium Technical Digest

Author(s): P.C. Canfield ; D.J. Allstot
Sponsor(s): IEEE
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1992
Conference Location: Miami Beach, FL, USA, USA
Conference Date: 4 October 1992
Page(s): 237 - 240
ISBN (Paper): 0-7803-0773-9
DOI: 10.1109/GAAS.1992.247265
Regular:

The effect of p-type implants on the sidegating behavior of n-channel ion-implanted GaAs MESFETs is investigated. A number of different sidegate structures are examined, and the dependence of the... View More

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