IEEE - Institute of Electrical and Electronics Engineers, Inc. - Analysis of gate capacitances in GaAs JFETs

1992 GaAs IC Symposium Technical Digest

Author(s): R. Anholt
Sponsor(s): IEEE
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1992
Conference Location: Miami Beach, FL, USA, USA
Conference Date: 4 October 1992
Page(s): 229 - 232
ISBN (Paper): 0-7803-0773-9
DOI: 10.1109/GAAS.1992.247263
Regular:

Using two-dimensional simulations, the gate capacitances of n-channel, p-barrier GaAs junction field effect transistors (JFETs) fabricated with ion-implantation and diffused-junction technologies... View More

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