IEEE - Institute of Electrical and Electronics Engineers, Inc. - Fabrication and electrical properties of lapped type of TMR heads for /spl sim/50 Gb/in/sup 2/ and beyond

Author(s): S. Araki ; K. Sato ; T. Kagami ; S. Saruki ; T. Uesugi ; N. Kasahara ; T. Kuwashima ; N. Ohta ; Jijun Sun ; K. Nagai ; Shuxiang Li ; N. Hachisuka ; H. Hatate ; T. Kagotani ; N. Takahashi ; K. Ueda ; M. Matsuzaki
Sponsor(s): IEEE Magnetics Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2002
Volume: 38
Page Count: 6
Page(s): 72 - 77
ISSN (Paper): 0018-9464
ISSN (Online): 1941-0069
DOI: 10.1109/TMAG.2002.988914
Regular:

Tunnel giant magnetoresistance (TMR) heads at /spl sim/50 Gb/in/sup 2/ have been fabricated using improved lapping process. Together with writer of 2.0 T pole materials, recording performance has... View More

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