IEEE - Institute of Electrical and Electronics Engineers, Inc. - Oxynitridation using radical-oxygen and -nitrogen for high-performance and highly reliable n/pFETs

Author(s): M. Togo ; K. Watanabe ; M. Terai ; S. Kimura ; T. Yamamoto ; T. Tatsumi ; T. Mogami
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2002
Volume: 49
Page Count: 7
Page(s): 1,761 - 1,767
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2002.803640
Regular:

We report the importance of oxynitridation using radical-oxygen and -nitrogen to form a low-leakage and highly reliable 1.6-nm SiON gate-dielectric without performance degradation in n/pFETs. It... View More

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